| PART |
Description |
Maker |
| APT4F120K APT4F120K10 |
1200V, 4A, 4.2Ω Max Trr ?95nS
|
Microsemi Corporation
|
| APT29F100B2 APT29F100L |
1000V, 29A, 0.46ヘ Max, trr ÷270ns N-Channel FREDFET
|
Microsemi Corporation
|
| X40020V14I-C X40020V14I-B X40020V14I-A |
DIODE, STANDARD, 95A, 400V, STUD; Voltage, Vrrm:400V; Current, If av:95A; Case style:E12; Current, Ifs max:700A; Diode type:Standard recovery; Polarity, diode:Stud Anode; Thread size:M8; Voltage, forward at If:1.5V RoHS Compliant: Yes
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1600V; Forward Current Avg Rectified, IF(AV):50A; Non Repetitive Forward Surge Current Max, Ifsm:700A; Forward Voltage Max, VF:1.6V; Package/Case:SO-32B
DIODE, STUD 50A 1200VDIODE, STUD 50A 1200V; Voltage, Vrrm:1200V; Current, If av:50A; Current, Ifs max:700A; Voltage, forward at If:1.6V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Anode
|
Intersil Corporation
|
| IHW20T120 |
IGBTs & DuoPacks - 20A / 1200V IGBT and 9A / 1200V Diode in DuoPack
Soft Switching Series
|
INFINEON[Infineon Technologies AG]
|
| QIQ1245001 POWEREXINC-QIQ1245001 |
Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode
|
POWEREX[Powerex Power Semiconductors]
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| EMP25Q12A EMP25Q12B EMP25Q12C EMP25Q12D EMP25Q12M |
Programmable solated intelligent power module, a 25A, 1200V, three-phase inverter for 15kW industrial and servo motors
NPT IGBTs 25A, 1200V
|
International Rectifier
|
| IKB01N120H2E3045A IKP01N120H2 |
IGBTs & DuoPacks - 1A 1200V HighSpeed2 DuoPack IGBT D2Pak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 DuoPack IGBT TO220
1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package.
|
Infineon
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| IKW03N120H2 Q67040-S4597 IKB03N120H2 IKP03N120H2 Q |
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT D2Pak
1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package.
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO247
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO220
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
From old datasheet system
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
